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Electron-Trapping Defects in MBE-Grown Relaxed n-In_0.05Ga_0.95As on Gallium Arsenide
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Atomic Ordering in (110)InGaAs and Its Influence on Electron Mobility
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Dopant Diffusion in Si_0.7Ge_0.3
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Atomic Ordering in (110)InGaAs and Its Influence...

Atomic Ordering in (110)InGaAs and Its Influence on Electron Mobility

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1297-1302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1297

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Online since:

January 1992

Authors:

O. Ueda, Y. Nakata

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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