Paper Titles

Strain Relief in Thin Films: Can we Control it?
p.1271

Composition Modulation Effects on the Generation of Defects in In_0.54Ga_0.46As Strained Layers
p.1285

Electron-Trapping Defects in MBE-Grown Relaxed n-In_0.05Ga_0.95As on Gallium Arsenide
p.1291

Atomic Ordering in (110)InGaAs and Its Influence on Electron Mobility
p.1297

Dopant Diffusion in Si_0.7Ge_0.3
p.1303

Characterisation of Dislocations in the Presence of Transition Metal Contamination
p.1309

Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon
p.1315

Photoluminescence and Electronic Structure of Dislocations in Si Crystals
p.1321

Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
p.1327

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Dopant Diffusion in Si0.7Ge0.3

Dopant Diffusion in Si_0.7Ge_0.3

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1303-1308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1303

Citation:

Cite this paper

Online since:

January 1992

Authors:

D. Mathiot, Jean Claude Dupuy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: