Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

1327-1332

DOI:

10.4028/www.scientific.net/MSF.83-87.1327

Citation:

M. Tajima et al., "Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence", Materials Science Forum, Vols. 83-87, pp. 1327-1332, 1992

Online since:

January 1992

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$35.00

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