Paper Titles

Atomic Ordering in (110)InGaAs and Its Influence on Electron Mobility
p.1297

Dopant Diffusion in Si_0.7Ge_0.3
p.1303

Characterisation of Dislocations in the Presence of Transition Metal Contamination
p.1309

Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon
p.1315

Photoluminescence and Electronic Structure of Dislocations in Si Crystals
p.1321

Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
p.1327

Theoretical Study on the Structure and Properties of Dislocations in Semiconductors
p.1333

Solid State Processes at the Atomic Level
p.1339

Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices
p.1351

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Photoluminescence and Electronic Structure of...

Photoluminescence and Electronic Structure of Dislocations in Si Crystals

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1321-1326

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1321

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Online since:

January 1992

Authors:

Yu. Lelikov, Yu. Rebane, S. Ruvimov, D. Tarhin, A. Sitnikova, Yu. Shreter

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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