Paper Titles

Characterisation of Dislocations in the Presence of Transition Metal Contamination
p.1309

Correlation of the D-Band Photoluminescence with Spatial Properties of Dislocations in Silicon
p.1315

Photoluminescence and Electronic Structure of Dislocations in Si Crystals
p.1321

Characterization of Point Defects in Si Crystals by Highly Spatially Resolved Photoluminescence
p.1327

Theoretical Study on the Structure and Properties of Dislocations in Semiconductors
p.1333

Solid State Processes at the Atomic Level
p.1339

Theory of Zn-Enhanced Disordering in GaAs/AlAs Superlattices
p.1351

Spatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum Wells
p.1357

Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
p.1363

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Theoretical Study on the Structure and Properties...

Theoretical Study on the Structure and Properties of Dislocations in Semiconductors

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1333-1338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1333

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Online since:

January 1992

Authors:

Kinichi Masuda-Jindo

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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