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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Electron-Trapping Defects in MBE-Grown Relaxed...

Electron-Trapping Defects in MBE-Grown Relaxed n-In_0.05Ga_0.95As on Gallium Arsenide

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

1291-1296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.1291

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Online since:

January 1992

Authors:

A.C. Irvine, L.K. Howard, D.W. Palmer

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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