Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

1291-1296

DOI:

10.4028/www.scientific.net/MSF.83-87.1291

Citation:

A.C. Irvine et al., "Electron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium Arsenide", Materials Science Forum, Vols. 83-87, pp. 1291-1296, 1992

Online since:

January 1992

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