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Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon
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Reorientation of Stress Induced Alignment of Thermal Donors in Silicon
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Silicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped Silicon
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Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy
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IR Absorption in Monoisotopic Germanium
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Reorientation of Stress Induced Alignment of...

Reorientation of Stress Induced Alignment of Thermal Donors in Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

401-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.401

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Online since:

January 1992

Authors:

P. Wagner, J. Hage, J.M. Trombetta, G.D. Watkins

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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