Paper Titles

ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon
p.357

Spin-Marking Method in Silicon: Interstitial and Pairing Defects
p.363

Electrically Active Oxygen in Gallium Arsenide
p.369

Oxygen Related Point Defects in GaAs
p.377

New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs
p.389

Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon
p.395

Reorientation of Stress Induced Alignment of Thermal Donors in Silicon
p.401

Silicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped Silicon
p.407

Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy
p.413

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87New Evidences for the Defect Model of...

New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

389-394

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.389

Citation:

Cite this paper

Online since:

January 1992

Authors:

Xue-Fu Zhong

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: