Paper Titles

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EPR Study of Multistable C_i-P_s Silicon
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Observation of a Configurationally Unstable Defect in Si
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ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon
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Spin-Marking Method in Silicon: Interstitial and Pairing Defects
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Electrically Active Oxygen in Gallium Arsenide
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Oxygen Related Point Defects in GaAs
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New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs
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Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Spin-Marking Method in Silicon: Interstitial and...

Spin-Marking Method in Silicon: Interstitial and Pairing Defects

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

363-368

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.363

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Online since:

January 1992

Authors:

S.M. Yakubenya

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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