Paper Titles

Interactions between Defects during the Annealing of Crystalline Silicon
p.315

An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
p.321

The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
p.327

A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
p.333

Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon
p.339

EPR Study of Multistable C_i-P_s Silicon
p.345

Observation of a Configurationally Unstable Defect in Si
p.351

ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon
p.357

Spin-Marking Method in Silicon: Interstitial and Pairing Defects
p.363

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Configurational Metastability of Carbon-Phosphorus...

Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

339-344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.339

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Online since:

January 1992

Authors:

Emir Gürer, Brent W. Benson, G.D. Watkins

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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