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Photoluminescence of Edge-Defined Film-FED Growth Silicon
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EPR Studies of NTD-Produced as Donors in Isotopically Enriched ⁷⁴Ge Single Crystals
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In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
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Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
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Interactions between Defects during the Annealing of Crystalline Silicon
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An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
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The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
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A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
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Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Interactions between Defects during the Annealing...

Interactions between Defects during the Annealing of Crystalline Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

315-320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.315

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Online since:

January 1992

Authors:

Gordon Davies, Kwok Tat Kun, Tim Reade

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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