Paper Titles

Electronic Structure of Isolated Aluminium Point Defects and Defect Pairs in Silicon
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Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon
p.285

Photoluminescence of Edge-Defined Film-FED Growth Silicon
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EPR Studies of NTD-Produced as Donors in Isotopically Enriched ⁷⁴Ge Single Crystals
p.297

In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
p.303

Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
p.309

Interactions between Defects during the Annealing of Crystalline Silicon
p.315

An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
p.321

The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87In Situ HVEM Study of Dopant Dependent Defect...

In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

303-308

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.303

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Online since:

January 1992

Authors:

A. Romano-Rodríguez, Jan Vanhellemont

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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