In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

303-308

DOI:

10.4028/www.scientific.net/MSF.83-87.303

Citation:

A. Romano-Rodríguez and J. Vanhellemont, "In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation", Materials Science Forum, Vols. 83-87, pp. 303-308, 1992

Online since:

January 1992

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$35.00

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