Paper Titles

On the Determination of Nitrogen in Czochralski Silicon
p.263

β NMR of Nonsubstitutional ¹²B after Implantation into P-Type Silicon
p.269

Defect Impurity Complex Formation at High Donor Concentration in Silicon
p.273

Electronic Structure of Isolated Aluminium Point Defects and Defect Pairs in Silicon
p.279

Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon
p.285

Photoluminescence of Edge-Defined Film-FED Growth Silicon
p.291

EPR Studies of NTD-Produced as Donors in Isotopically Enriched ⁷⁴Ge Single Crystals
p.297

In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
p.303

Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
p.309

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Interaction and Dynamics of High-Temperature...

Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

285-290

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.285

Citation:

Cite this paper

Online since:

January 1992

Authors:

N.B. Urli, B. Pivac

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: