Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon
p.285
p.285
Photoluminescence of Edge-Defined Film-FED Growth Silicon
p.291
p.291
EPR Studies of NTD-Produced as Donors in Isotopically Enriched 74Ge Single Crystals
p.297
p.297
In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
p.303
p.303
Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
p.309
p.309
Interactions between Defects during the Annealing of Crystalline Silicon
p.315
p.315
An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
p.321
p.321
The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
p.327
p.327
A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
p.333
p.333
Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
Abstract:
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Periodical:
Materials Science Forum (Volumes 83-87)
Pages:
309-314
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Online since:
January 1992
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© 1992 Trans Tech Publications Ltd. All Rights Reserved
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