Paper Titles

Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
p.309

Interactions between Defects during the Annealing of Crystalline Silicon
p.315

An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si
p.321

The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
p.327

A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon
p.333

Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon
p.339

EPR Study of Multistable C_i-P_s Silicon
p.345

Observation of a Configurationally Unstable Defect in Si
p.351

ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon
p.357

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87A New Defect Observed in Annealed Phosphorus-Doped...

A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

333-338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.333

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Online since:

January 1992

Authors:

J. Lennart Lindström, Bengt Gunnar Svensson, W.M. Chen

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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