A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

333-338

DOI:

10.4028/www.scientific.net/MSF.83-87.333

Citation:

J. L. Lindström et al., "A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon", Materials Science Forum, Vols. 83-87, pp. 333-338, 1992

Online since:

January 1992

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$35.00

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