Paper Titles

β NMR of Nonsubstitutional ¹²B after Implantation into P-Type Silicon
p.269

Defect Impurity Complex Formation at High Donor Concentration in Silicon
p.273

Electronic Structure of Isolated Aluminium Point Defects and Defect Pairs in Silicon
p.279

Interaction and Dynamics of High-Temperature Defects in Carbon-Rich Silicon
p.285

Photoluminescence of Edge-Defined Film-FED Growth Silicon
p.291

EPR Studies of NTD-Produced as Donors in Isotopically Enriched ⁷⁴Ge Single Crystals
p.297

In Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron Irradiation
p.303

Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge
p.309

Interactions between Defects during the Annealing of Crystalline Silicon
p.315

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Photoluminescence of Edge-Defined Film-FED Growth...

Photoluminescence of Edge-Defined Film-FED Growth Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

291-296

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.291

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Online since:

January 1992

Authors:

Tiago Martins, William D. Sawyer, Jürgen Michel

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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