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New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs
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Reorientation of Stress Induced Alignment of Thermal Donors in Silicon
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Silicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped Silicon
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Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy
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Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal
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IR Absorption in Monoisotopic Germanium
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Ab Initio Molecular Dynamics of Semiconductor Defects
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Impurity and Defect Induced Metastabilities in Tetrahedral Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Defect Distribution in Large CZ-Silicon Wafers...

Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

413-418

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.413

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Online since:

January 1992

Authors:

Peter Mascher, Werner Puff, S.K. Hahn, K.H. Cho, B.Y. Lee

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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