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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Pressure Dependence of Formation and Migration...

Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

469-474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.469

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Online since:

January 1992

Authors:

Osamu Sugino, Atsushi Oshiyama

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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