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Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy
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Many-Electron Effects in the Negative Silicon Vacancy
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Defects and Bandtails in Amorphous Silicon
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Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors
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Donor Bistability Induced by Electron-Phonon Coupling
p.493

The Temperature Dependence of Trap Cross Sections
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Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations
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Recombination-Induced Defect Heating and Related Phenomena
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Electron-Hole Mechanism of Migration and Defect Interaction
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Donor Bistability Induced by Electron-Phonon...

Donor Bistability Induced by Electron-Phonon Coupling

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

493-498

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.493

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Online since:

January 1992

Authors:

S. Bednarek, J. Adamowski

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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