Paper Titles

Ab Initio Cluster Calculation of Hyperfine Interactions and Total-Energy Surfaces for N in Diamond, Silicon and Germanium
p.463

Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy
p.469

Many-Electron Effects in the Negative Silicon Vacancy
p.475

Defects and Bandtails in Amorphous Silicon
p.481

Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors
p.487

Donor Bistability Induced by Electron-Phonon Coupling
p.493

The Temperature Dependence of Trap Cross Sections
p.499

Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations
p.505

Recombination-Induced Defect Heating and Related Phenomena
p.511

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Theory of Second-Order Vibronic Reduction Factors...

Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

487-492

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.487

Citation:

Cite this paper

Online since:

January 1992

Authors:

Colin A. Bates, Janette L. Dunn, Victor Z. Polinger, Lee D. Hallam, Peter J. Kirk, Sajida Jamila

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: