Paper Titles

Equilibrium Sites and Relative Stability of Atomic and Molecular Hydrogen in GaAs
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Unintentional Hydrogenation of III-V Semiconductors during Device Processing
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Hydrogen Passivation of Shallow and Deep Centers in GaSb
p.623

Hydrogen in InAs on GaAs Heterostructures: Diffusion Behavior, Electrical and Optical Effects
p.629

Effects of Hydrogen in Si-Doped AlAs
p.635

Energy Transfer in Rare-Earth-Doped III-V Semiconductors
p.641

Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
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Theory of Substitutional Rare Earth Impurities in Semiconductors
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Spectroscopic Investigation of the Er Site in GaAs:Er
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Effects of Hydrogen in Si-Doped AlAs

Effects of Hydrogen in Si-Doped AlAs

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

635-640

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.635

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Online since:

January 1992

Authors:

E. Tuncel, H. Sigg, E. Meier, L. Pavesi, Paolo Giannozzi, D.M. Martin, F. Morier-Genoud, F.K. Reinhart

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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