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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Dopant Enhancement of the 1.54 µm Emission of...

Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

653-658

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.653

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Online since:

January 1992

Authors:

Jürgen Michel, Lionel C. Kimerling, J.L. Benton, D.J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, R.F. Ferrante

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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