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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Excitation Mechanism of the Erbium 4F Emissions in...

Excitation Mechanism of the Erbium 4F Emissions in GaAs

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

671-676

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.671

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Online since:

January 1992

Authors:

J.E. Colon, D.W. Elsaesser, Y.K. Yeo, R.L. Hengehold, G.S. Pomrenke

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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