Paper Titles

Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon
p.653

Theory of Substitutional Rare Earth Impurities in Semiconductors
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Spectroscopic Investigation of the Er Site in GaAs:Er
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Excitation Mechanism of the Erbium 4F Emissions in GaAs
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Electrical Properties of Yb, Er Doped InP
p.677

Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP
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Photoluminescent Properties of Yb Doped InAsP Alloys
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FTIR High Resolution Optical Study of GaAs:Fe
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Interstitial and Substitutional Mn in GaAs and GaP: Magnetic Resonance Studies
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Electrical Properties of Yb, Er Doped InP

Electrical Properties of Yb, Er Doped InP

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

677-682

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.677

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Online since:

January 1992

Authors:

D. Seghier, Taha Benyattou, G. Bremond, Frédérique Ducroquet, Jean-Jacques Marchand, Gérard Guillot, Christophe Lhomer, Bertrand Lambert, Yves Toudic, Alain Le Corre

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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