Paper Titles

Theory of Substitutional Rare Earth Impurities in Semiconductors
p.659

Spectroscopic Investigation of the Er Site in GaAs:Er
p.665

Excitation Mechanism of the Erbium 4F Emissions in GaAs
p.671

Electrical Properties of Yb, Er Doped InP
p.677

Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP
p.683

Photoluminescent Properties of Yb Doped InAsP Alloys
p.689

FTIR High Resolution Optical Study of GaAs:Fe
p.695

Interstitial and Substitutional Mn in GaAs and GaP: Magnetic Resonance Studies
p.701

Electronic Structure of Transition-Metal Impurities in GaAs_1-xP_x Alloys
p.707

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Optically Detected Cyclotron Resonance Studies of...

Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

683-688

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.683

Citation:

Cite this paper

Online since:

January 1992

Authors:

Marek Godlewski, B.J. Heijmink Liesert, T. Gregorkiewicz, C.A.J. Ammerlaan

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: