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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87

Materials Science Forum Vols. 83-87

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87

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Paper Title Page

Spin-Marking Method in Silicon: Interstitial and Pairing Defects

Authors: S.M. Yakubenya

363

Electrically Active Oxygen in Gallium Arsenide

Authors: H.C. Alt

369

Oxygen Related Point Defects in GaAs

Authors: Marek Skowronski

377

New Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAs

Authors: Xue-Fu Zhong

389

Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon

Authors: Peter Deák, M. Heinrich, L.C. Snyder, James W. Corbett

395

Reorientation of Stress Induced Alignment of Thermal Donors in Silicon

Authors: P. Wagner, J. Hage, J.M. Trombetta, G.D. Watkins

401

Silicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped Silicon

Authors: B.J. Heijmink Liesert, T. Gregorkiewicz, C.A.J. Ammerlaan

407

Defect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation Spectroscopy

Authors: Peter Mascher, Werner Puff, S.K. Hahn, K.H. Cho, B.Y. Lee

413

Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal

Authors: Hiroshi Yamada-Kaneta, Chioko Kaneta, Tsutomu Ogawa

419

IR Absorption in Monoisotopic Germanium

Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.K. Shinkarenko

425

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