Influence Different Compositions of (1-x)ZnFe₂O₄ – xSiO₂ Nanostructures Thin Film Synthesized by Sol-Gel Method

Abstract:

SiO₂ compound was introduced into zinc ferrite using formula (1-x)ZnFe₂O₄ – xSiO₂ synthesized by sol-gel method where distilled water and citric acid was used as a solvent and binder agent. The produced samples were annealed at 450 °C for 1h. The AFM result analysis show that the average surface roughness and particle size decreased as the compositions of x was increased. XRD results analysis confirmed the formation of spinel structures with crystallite size within range 11.27 – 4.72 nm. UV-Vis analysis to determine the energy band gap of the (1-x)ZnFe₂O₄ – xSiO₂ samples. It shows that the energy band gap increased as the composition of SiO₂ was increased due to the dielectric properties of silicon dioxide. FTIR results analysis exhibit common band in the range of 400 – 4000 cm^-1. The observed band near 2350 cm^-1 shows the presence of oxygen-oxygen bond in the face centered cubic (fcc) crystal lattice of oxygen atoms. The addition of SiO₂ into ZnFe₂O₄ will help to enhance the morphological structures and optical properties. This new proposed dielectric material can be used as dielectric substrate microstrip patch antenna.

• Periodical: Materials Science Forum (Volume 846)
• Pages: 607-613
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.846.607
• Online since: March 2016
• Authors: Mohd Syafiq Zulfakar, Huda Abdullah*, Wan Nasarudin Wan Jalal, Zalita Zainuddin, Sahbudin Shaari
• Keywords: Dielectric Material, Silicon Dioxide, Sol-Gel Method, Zinc Ferrite

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