Polarized Infrared Reststrahlen Features of Wurtzite InGaN Thin Film

Abstract:

Polarized infrared (IR) reflectance measurement was carried out to investigate the optical phonon modes of wurtzite structure In_0.92Ga_0.08N thin film grown by molecular beam epitaxy. Composition dependence of IR reststrahlen features was observed. Theoretical polarized IR reflectance spectrum was simulated using the standard multilayer optics technique with a multi-oscillator dielectric function model. By obtaining the best fit of experimental and theoretical spectrum, the Brillouin zone center E₁ optical phonon modes together with the dielectric constant, layer thickness, free carriers concentration and mobility were extracted non-destructively. The extracted E₁ optical phonon modes were compared with those generated from modified random element isodisplacement (MREI) model.

• Periodical: Materials Science Forum (Volume 846)
• Pages: 614-619
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.846.614
• Online since: March 2016
• Authors: Pauline Yew, Lee Sai Cheong, Ng Sha Shiong, Yoon Tiem Leong, Haslan Abu Hassan, Wei Li Chen
• Keywords: Infrared Reflectance, MREI Model, Optical Phonon, Wurtzite InGaN

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