Influence of Deposition Time on Bonding and Morphology of Amorphous Carbon Nitride Thin Films

Abstract:

Amorphous carbon nitride (a-CN_x) is a well-known material that can be used in various applications such as coating for hard disk, wear resistant, humidity sensor and others. In this research, a-CN_x thin films have been deposited by using radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) with the mixing of pure methane (CH₄) and nitrogen (N₂). The gas ratio of CH₄/N₂, electrode distance, pressure and temperature of deposition is kept constant while deposition time is allowed to vary from 30 to 150 minutes. Raman spectroscopy and field emission scanning electron microscopy (FESEM) have been used to study the bonding and morphology of these films respectively. An increase in deposition time resulted with thedecrease in sp² content in the a-CN_x thin films. Theincrease in the I_d/I_g intensity ratio with the increase in deposition time can be explained by the reducing size of graphitic cluster. Long deposition time retarded the growth rate of a-CN_x thin films due to etching effects. Longer exposure to the etching effect resultingin the creation of small graphitic cluster with the formation of spongy-like porous features.

• Periodical: Materials Science Forum (Volume 846)
• Pages: 657-662
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.846.657
• Online since: March 2016
• Authors: Rozidawati Awang*, Nurul Izzati Azman, Noorain Purhanudin
• Keywords: FESEM, PECVD, Raman Spectroscopy

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