Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films

Abstract:

CoSb₃ thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb₃ thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb₃ thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb₃ phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.

• Periodical: Materials Science Forum (Volume 847)
• Pages: 143-147
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.847.143
• Online since: March 2016
• Authors: Ya Dan Li, Zhuang Hao Zheng, Ping Fan*, Jing Ting Luo, Guang Xing Liang, Bao Xiu Huang
• Keywords: Cobalt Antimony, Polyimide Flexible Substrate, Thermoelectric Thin Film

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