Synthesis and Characterization of CH3NH3Pb1-xSnxI3 Crystal

Ju Long Chen; Guang Xing Liang; Ping Fan; Ting Ting Mao; Di Gu

doi:10.4028/www.scientific.net/MSF.847.148

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HomeMaterials Science ForumMaterials Science Forum Vol. 847Synthesis and Characterization of CH3NH3Pb1-xSnxI3...

Synthesis and Characterization of CH₃NH₃Pb_1-xSn_xI₃ Crystal

Abstract:

The CH₃NH₃PbI₃ light-absorbing layer shows preferably photovoltaic performance. However, comparing with CH₃NH₃PbI₃ film, the CH₃NH₃SnI₃ film show smaller band gap and wider light absorption range, meanwhile, it is non-toxic and environmental friendly solar cell material. In this paper, different proportions of tin (Sn) was doped into CH₃NH₃PbI₃ film, the atomic ratio of lead-tin strictly controlled to form CH₃NH₃SnI₃ from CH₃NH₃PbI₃. The five different proportions of doping CH₃NH₃Pb_1-xSn_xI₃perovskite powders were studied. The morphology of powders was observed by scanning electron microscopy (SEM). X-ray diffraction (XRD) and energy dispersive spectrum (EDS) were used to analyze the crystallization and the proportion composition of powders, respectively. The experimental results show that the powder crystal orientation was very obvious at the ratio of lead-tin around 1:1.99 and the atomic ratio close to the ideal stoichiometric ratio of doped atoms.

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Materials Science Forum (Volume 847)

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148-152

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https://doi.org/10.4028/www.scientific.net/MSF.847.148

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March 2016

Authors:

Ju Long Chen, Guang Xing Liang, Ping Fan, Ting Ting Mao, Di Gu

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Band Gap, Crystal Characterization, Doping, Perovskite

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