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HomeMaterials Science ForumMaterials Science Forum Vol. 852Strain Distribution of Ge/Si Quantum Dots in Array

Strain Distribution of Ge/Si Quantum Dots in Array

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Abstract:

Strain has valuable effects on the formation of the growth and the photo electronic properties of Ge/Si quantum dots (QDs), and it is important to understand the distribution of strain and the other properties of Ge/Si QDs theoretically. In this work, a method based on the Green’s function technique is used to solve elastic equations and the strain of different QDs shapes is calculated by a numerical algorithm. The strain of QDs which array in different density is analyzed and the strain of hemispherical QDs is compared with pyramidal QDs in calculations.

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Functional Materials Research

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Periodical:

Materials Science Forum (Volume 852)

Pages:

229-237

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.852.229

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Online since:

April 2016

Authors:

Tao Pan, Shao Ying Ke, Zhang Sheng Shi, Chong Wang, Yu Yang

Keywords:

Green’s Function, Quantum Dots (QDs), Strain

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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