Magnetic Field Sensing with Atomic Scale Defects in SiC Devices

Corey J. Cochrane; Jordana Blacksberg; Patrick M. Lenahan; Mark A. Anders

doi:10.4028/www.scientific.net/MSF.858.265

Paper Titles

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC
p.249

Density-Functional Calculation of Carbon-Interstitial Energies in a 4H-SiC(0001)-SiO₂ Interface
p.253

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study
p.257

Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory
p.261

Magnetic Field Sensing with Atomic Scale Defects in SiC Devices
p.265

Photoluminescence of 10H-SiC
p.269

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD
p.274

Heteropolytypic Superlattices
p.278

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC
p.283

HomeMaterials Science ForumMaterials Science Forum Vol. 858Magnetic Field Sensing with Atomic Scale Defects...

Magnetic Field Sensing with Atomic Scale Defects in SiC Devices

Abstract:

Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.