Photoluminescence of 10H-SiC

Anne Henry; Hiroshi Yano; Tomoaki Hatayama

doi:10.4028/www.scientific.net/MSF.858.269

Paper Titles

Density-Functional Calculation of Carbon-Interstitial Energies in a 4H-SiC(0001)-SiO₂ Interface
p.253

Identifying Performance Limiting Defects in Silicon Carbide pn-Junctions: A Theoretical Study
p.257

Investigation of Mo Defects in 4H-SiC by Means of Density Functional Theory
p.261

Magnetic Field Sensing with Atomic Scale Defects in SiC Devices
p.265

Photoluminescence of 10H-SiC
p.269

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD
p.274

Heteropolytypic Superlattices
p.278

High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC
p.283

Optical Nuclear Spin Polarization of Divacancies in SiC
p.287

HomeMaterials Science ForumMaterials Science Forum Vol. 858Photoluminescence of 10H-SiC

Photoluminescence of 10H-SiC

Abstract:

The photoluminescence of the near band gap emission of 10H-SiC is revealed for the first time and detected just below 3.0 eV. The crystallinity thus polytype of the sample is controlled with transmission electron microscope analyses and Laue diffraction. On the photoluminescence spectra up to eight sharp lines are associated to the non-phonon lines of the nitrogen bound exciton even if ten are expected in 10H-SiC. Phonon replicas of these non-phonon lines are observed at lower energy with energy separations similar than those in other hexagonal SiC polytypes. At moderate temperature free-exciton replicas are also observed which allow the determination of the excitonic band gap at 3020.6 meV, value in agreement with the hexagonality of 10H-SiC of 40%. The binding energies associated to the nitrogen bound-excitons are determined as well as the ionization energies of the nitrogen donors in the 10H-SiC polytype.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

269-273

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.269

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Online since:

May 2016

Authors:

Anne Henry*, Hiroshi Yano, Tomoaki Hatayama

Keywords:

10H-SiC, Exitonic Band Gap, Ionization, Photoluminescence

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