Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors

Yong Zhao Yao; Yukari Ishikawa; Yoshihiro Sugawara; Koji Sato; Katsunori Danno; Takayuki Shirai; Kazuaki Sato; Takeshi Bessho; Yumiko Takahashi; Yoshiki Yamashita; Keiichi Hirano

doi:10.4028/www.scientific.net/MSF.858.389

Paper Titles

Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.371

Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
p.376

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
p.380

Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage
p.384

Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
p.389

Dislocation Characterization in 4H-SiC Crystals
p.393

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC
p.397

Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC
p.401

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
p.405

HomeMaterials Science ForumMaterials Science Forum Vol. 858Dislocations in SiC Revealed by NaOH Vapor Etching...

Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors

Abstract:

Threading dislocations (TDs) in 4H-SiC have been studied by comparing etch pits formed by NaOH vapor etching with results of synchrotron monochromatic-beam X-ray topography (XRT) taken under different g-vectors. Burgers vectors determined based on XRT results were utilized to investigate the etch pit characteristics of edge (TED), screw (TSD) and mixed (Burgers vector b=c+a, TMD) threading dislocations. It has been found that pit formation by NaOH vapor etching was very different to that by conventional molten KOH etching. We discuss the possibility of using NaOH vapor etching to distinguish TMDs from TSDs, and report a variety of characteristic etch pits formed by this method and their correlations to dislocation behavior.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

389-392

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.389

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Online since:

May 2016

Authors:

Yong Zhao Yao*, Yukari Ishikawa, Yoshihiro Sugawara, Koji Sato, Katsunori Danno, Takayuki Shirai, Kazuaki Sato, Takeshi Bessho, Yumiko Takahashi, Yoshiki Yamashita, Keiichi Hirano

Keywords:

4H-SiC, c+a Mixed-Type Dislocation, Etch Pit, NaOH Vapor Etching, X-Ray Topography

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