Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy

Toshiyuki Isshiki; Masaki Hasegawa

doi:10.4028/www.scientific.net/MSF.858.371

Paper Titles

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357

Three-Dimensional Imaging of Extended Defects in 4H-SiC
p.361

Post-Growth Micropipe Formation in 4H-SiC
p.367

Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.371

Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
p.376

Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
p.380

Effects of Basal Plane Dislocation Density in 4H-SiC Substrate on Degradation of Body-Diode Forward Voltage
p.384

Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors
p.389

HomeMaterials Science ForumMaterials Science Forum Vol. 858Observation of Pair Structures of Threading...

Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy

Abstract:

Two types of shallow surface defects associated with treading dislocation were found out by using mirror projection electron microscope. One was single groove with a dimension of about 4 nm in depth, 2 μm in width and 15 μm in length, named “as nanogroove”. The other was a shallow groove at 1.3nm in depth being between pair of hillocks at 2-3 nm in height and 1.5 μm in distance, named as “nanohillock pair”. Dislocations combined with the defects were found out by micro-KOH etching method with low-energy scanning electron microscopy. The dislocations were identified by g-b analysis using scanning transmission electron microscopy as threading edge dislocations converted from basal plane dislocation at bulk-epi layer interface or within epi layer.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

371-375

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.371

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Online since:

May 2016

Authors:

Toshiyuki Isshiki*, Masaki Hasegawa

Keywords:

BPD, Dislocation Conversion, Mirror Projection Electron Microscopy, Nanogroove, Nanohillock Pair, Surface Defect, TED

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