For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Recombination Processes in 4H-SiC pn Structures
p.345
Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349
Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353
Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357
Three-Dimensional Imaging of Extended Defects in 4H-SiC
p.361
Post-Growth Micropipe Formation in 4H-SiC
p.367
Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.371
Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
p.376
Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements
p.380

Three-Dimensional Imaging of Extended Defects in 4H-SiC

Article Preview

Abstract:

This paper describes 3D imaging of extended defects in 4H-SiC using optical second-harmonic generation (SHG) and two-photon-exited photoluminescence (2PPL). SHG selectively yields the 3D images of 3C-inclusions in a 4H-SiC epilayer, while 2PPL provides 3D images of 3C-inclusions, 8H stacking faults and single Shockley stacking faults. 2PPL band-edge emission visualizes dislocation lines of threading screw dislocations and threading edge dislocations, the tilt angles of which are evaluated.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2015 View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

361-366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.361

Citation:

Cite this paper

Online since:

May 2016

Authors:

Ryohei Tanuma*, Masahiro Nagano, Isaho Kamata, Hidekazu Tsuchida

Keywords:

Dislocation, Extended Defects, Imaging, Multi Photon, Photoluminescence, SHG, Silicon Carbide (SiC), Three Dimensional, Topography, X-Ray

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] R. Tanuma, T. Kubo, F. Togoh, T. Tawara, A. Saito, K. Fukuda, K. Hayashi and Y. Tsusaka, Phys. Status Solidi A 204 (2007) 2706-2713.

DOI: 10.1002/pssa.200675703

Google Scholar

[2] R. Tanuma, T. Tamori, Y. Yonezawa, H. Yamaguchi, H. Matsuhata, K. Fukuda and K. Arai, Material Sci. Forum 615-617 (2009) 251-254.

DOI: 10.4028/www.scientific.net/msf.615-617.251

Google Scholar

[3] R. Tanuma, D. Mori, I. Kamata and H. Tsuchida: Appl. Phys. Express 5 (2012) 061301.

Google Scholar

[4] R. Tanuma, D. Mori, I. Kamata and H. Tsuchida: J. Appl. Phys. 114 (2013) 023511.

Google Scholar

[5] W. R. Zipfel, R. M. Williams and W. W. Webb: Nature Biotech. 21 (2003) 1369-1377.

Google Scholar

[6] C. Meyer, G. Lüpke, E. Stein von Kamienski, A. Gölz and H. Kurz: Appl. Phys. Lett. 69 (1996) 2243-2245.

DOI: 10.1063/1.117141

Google Scholar

[7] C. Meyer, G. Lüpke, E. Stein von Kamienski, A. Gölz and H. Kurz: Diamond and Related Mater. 6 (1997) 1374-1377.

DOI: 10.1016/s0925-9635(97)00097-6

Google Scholar

[8] R. Hristu, E. K. Polychroniadis, S. G. Stanciu and G. A. Stanciu: 13th International Conference on Transparent Optical Networks (ICTON), Tu. C2. 3 (2011) 1-4.

DOI: 10.1109/icton.2011.5970955

Google Scholar

[9] Y. Kawata, S. Kunieda and T. Kaneko: Opt. Lett. 27 (2002) 297-299.

Google Scholar

[10] R. Tanuma and H. Tsuchida, Appl. Phys. Express 7 (2014) 021304.

Google Scholar

[11] R. Tanuma, M. Nagano, I. Kamata and H. Tsuchida, Appl. Phys. Express 7 (2014) 121303.

Google Scholar

[12] M. Nagano, I. Kamata and H. Tsuchida, Jpn. J. Appl. Phys. 52 (2013) 04CP09.

Google Scholar

[13] R. Tanuma and H. Tsuchida, Mater. Sci. Forum 821-823 (2015) 343-346.

Google Scholar

[14] S. Onda, H. Watanabe, Y. Kitou, H. Kondo, H. Uehigashi, Y. Hisada, K. Shiraishi and H. Saka, Philos. Mag. Lett., 93 (2013) 591.

DOI: 10.1080/09500839.2013.826395

Google Scholar

[15] M. Dudley, F. Wu, H. Wang, S. Byrappa, B. Raghothamachar, G. Choi, S. Sun, E. K. Sanchez, D. Hansen, R. Drachev, S. G. Mueller, M. J. Loboda, Appl. Phys. Lett. 98 (2011) 232110.

Google Scholar

[16] Y. Sugawara, M. Nakamori, Y. -Z. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa and Y. Ikuhara, Appl Phys Express 5 (2012) 081301.

DOI: 10.1143/apex.5.081301

Google Scholar

[17] Y. Chen and M. Dudley, Appl. Phys. Lett. 91 (2007) 141918.

Google Scholar

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.