Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering

Mikhail Logunov; Vladimir Neverov; Bari Mamin; Denis Skvortsov; Roman Sidorov

doi:10.4028/www.scientific.net/MSF.858.349

Paper Titles

Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
p.341

Recombination Processes in 4H-SiC pn Structures
p.345

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357

Three-Dimensional Imaging of Extended Defects in 4H-SiC
p.361

Post-Growth Micropipe Formation in 4H-SiC
p.367

HomeMaterials Science ForumMaterials Science Forum Vol. 858Study of Nanoscale Inhomogeneities in Silicon...

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering

Abstract:

The structure of 4H-SiC and 6H-SiC monocrystals’ nanoscale defects was studied by the small-angle X-ray scattering (SAXS) method. Analysis of dispersion indicatrices has shown the presence of inhomogeneities in the form of linear fractals in silicon carbide crystals of 6H and 4H polytypes, mass fractals in 6H polytype and inhomogeneities partition’s fractal surface in 4H polytype.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

349-352

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.349

Citation:

Cite this paper

Online since:

May 2016

Authors:

Mikhail Logunov*, Vladimir Neverov, Bari Mamin, Denis Skvortsov, Roman Sidorov

Keywords:

Fractal Dimension, Silicon Carbide (SiC), Small-Angle X-Ray Scattering, Structure Inhomogeneities

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] P. Friedrichs. T. Kimoto, L. Ley and G. Pensl (Eds. ), Silicon Carbide, Vol. 1: Growth, Defects, and Novel Applications, WILEY-VCH, Weinheim, (2010).

DOI: 10.1002/9783527629053

Google Scholar

[2] Y. Hijikata (Ed. ), Physics and Technology of Silicon Carbide Devices, IN-TECH, Rijeka, (2013).

Google Scholar

[3] B. B. Mandelbrot, The Fractal Geometry of Nature, W.H. Freeman, San Francisco, (1983).

Google Scholar

[4] D. I. Svergun, Determination of the regularization parameter in indirect-transform methods using perceptual criteria, J. Appl. Cryst. 25 (1992) 495-503.

DOI: 10.1107/s0021889892001663

Google Scholar

[5] M. V. Logunov, V. A. Neverov, and B. F. Mamin, Investigation of structural inhomogeneity of silicon carbide by the low-angle X-ray scattering method, Applied Physics (Rus) N5 (2014) 15-18.

Google Scholar

[6] O. H. Seeck, B. Murphy (Eds. ), X-Ray Diffraction: Modern Experimental Techniques, Pan Stanford Publishing Pte. Ltd., Singapore, (2015).

Google Scholar

[7] T. N. Vasilevskaya, T. V. Antropova, Small-angle X-ray scattering study of the structure of glassy nanoporous matrices, Physics of the Solid State 51 (2009) 2537-2545.

DOI: 10.1134/s1063783409120178

Google Scholar

[8] T. V. Khamova, O. A. Shilova, G. P. Kopitsa, L. Almásy, L. Rosta, Small-angle neutron scattering study of the mesostructure of bioactive coatings for stone materials based on nanodiamond-modified epoxy siloxane sols, Physics of the Solid State 56 (2014).

DOI: 10.1134/s1063783414010156

Google Scholar

[9] J. E. Martin, A. J. Hurd, Scattering from fractals, J. Appl. Cryst. 20 (1987) 61 – 78.

Google Scholar