Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Baptiste Berenguier; Olivier Palais; Sylvain Bertaina; Laurent Ottaviani; A. Lyoussi

doi:10.4028/www.scientific.net/MSF.858.337

Paper Titles

ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC
p.318

First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC
p.322

Fluorescent P-Type 4H-SiC Grown by PVT Method
p.326

Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
p.341

Recombination Processes in 4H-SiC pn Structures
p.345

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

HomeMaterials Science ForumMaterials Science Forum Vol. 858Lifetime Measurement in n-Type 4H-SiC by Mean of...

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Abstract:

During the past years, our team developed an original lifetime measurement method for semiconductors wafers, called microwave phase-shift (µW-PS). It was successfully employed to determinate bulk lifetime and surface recombination velocities on silicon. We recently adapted the method to silicon carbide (SiC), using a continuous UV laser and acousto-optic modulator. The theory is presented, using the standard continuity equation in n-type 4H-SiC. The proposed measurement setup firstly allows to estimate a bulk lifetime ranging from 2.3 to 6.7 µs.

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Materials Science Forum (Volume 858)

Pages:

337-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.337

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Online since:

May 2016

Authors:

Baptiste Berenguier*, Olivier Palais, Sylvain Bertaina, Laurent Ottaviani, A. Lyoussi

Keywords:

4H-SiC, Lifetime Measurement, Low Injection , Microwave Phase Shift, Silicon Carbide (SiC)

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