Fluorescent P-Type 4H-SiC Grown by PVT Method

Shi Yi Zhuo; Xi Liu; Pao Gao; Wei Huang; Cheng Feng Yan; Er Wei Shi

doi:10.4028/www.scientific.net/MSF.858.326

Paper Titles

Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes
p.308

Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
p.312

ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC
p.318

First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC
p.322

Fluorescent P-Type 4H-SiC Grown by PVT Method
p.326

Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
p.341

Recombination Processes in 4H-SiC pn Structures
p.345

HomeMaterials Science ForumMaterials Science Forum Vol. 858Fluorescent P-Type 4H-SiC Grown by PVT Method

Fluorescent P-Type 4H-SiC Grown by PVT Method

Abstract:

Fluorescent SiC, which contains donor and acceptor impurities with optimum concentrations, can work as a phosphor for visible light emission by donor-acceptor-pair (DAP) recombination. In this work, 3 inch N-B-Al co-doped fluorescent 4H-SiC crystals are prepared by PVT method. The p-type fluorescent 4H-SiC with low aluminum doping concentration can show intensive yellow-green fluorescence at room temperature. N-B DAP peak wavelength shifts from 578nm to 525nm and weak N-Al DAP emission occurred 403/420 nm quenches, when the temperature increases from 4K to 298K. The aluminum doping induces higher defect concentration in the fluorescent crystal and decreases optical transmissivity of the crystal in the visible light range. It triggers more non-radiative recombination and light absorption losses in the crystal.

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Materials Science Forum (Volume 858)

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326-330

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https://doi.org/10.4028/www.scientific.net/MSF.858.326

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Online since:

May 2016

Authors:

Shi Yi Zhuo, Xi Liu*, Pao Gao, Wei Huang, Cheng Feng Yan, Er Wei Shi

Keywords:

Light-Emitting Diodes, Photoluminescence, Physical Vapor Transport (PVT)

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