Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers

Daniel Kaminzky; Birgit Kallinger; Patrick Berwian; Mathias Rommel; Jochen Friedrich

doi:10.4028/www.scientific.net/MSF.858.341

Paper Titles

First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC
p.322

Fluorescent P-Type 4H-SiC Grown by PVT Method
p.326

Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
p.341

Recombination Processes in 4H-SiC pn Structures
p.345

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357

HomeMaterials Science ForumMaterials Science Forum Vol. 858Modelling of Effective Minority Carrier Lifetime...

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers

Abstract:

We present an extended model for the simulation of the effective minority carrier lifetime in 4H-SiC epiwafers after optical excitation. This multilayer model uses measured values (such as doping profile, point defect concentration and capture cross sections, epilayer thickness) as input parameters. The bulk lifetime and the diffusion constant are calculated from the actual time dependent excess carrier profiles, resulting in more realistic transients having different decay regimes than in other models. This enables a better understanding of optical lifetime measurements.