Recombination Processes in 4H-SiC pn Structures

Anatoly M. Strel'chuk; Baptiste Berenguier; Eugene B. Yakimov; Laurent Ottaviani

doi:10.4028/www.scientific.net/MSF.858.345

Paper Titles

Fluorescent P-Type 4H-SiC Grown by PVT Method
p.326

Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
p.341

Recombination Processes in 4H-SiC pn Structures
p.345

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357

Three-Dimensional Imaging of Extended Defects in 4H-SiC
p.361

HomeMaterials Science ForumMaterials Science Forum Vol. 858Recombination Processes in 4H-SiC pn Structures

Recombination Processes in 4H-SiC pn Structures

Abstract:

Commercial 4H-SiC p⁺n structures with an uncompensated donor concentration (N_d-N_a) of ~1.5∙10¹⁵ cm^-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

345-348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.345

Citation:

Cite this paper

Online since:

May 2016

Authors:

Anatoly M. Strel'chuk*, Baptiste Berenguier, Eugene B. Yakimov, Laurent Ottaviani

Keywords:

4H-SiC p⁺n Structure, Diffusion Length, EBIC, Lifetime, Photocurrent, Transient Current Characteristics

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] V.S. Ballandovich and G.N. Violina, Influence of annealing on minority carrier diffusion length in n-SiC(6H), Sov. Phys. Semicond. 15 (1981) 959-960.

Google Scholar

[2] V.I. Sankin, R.G. Verenchikova, Yu.A. Vodakov, M.G. Ramm, A.D. Roenkov, Minority carrier diffusion length in 6H- and 4H-SiC, Sov. Phys. Semicond. 16 (1982) 850-851.

Google Scholar

[3] M.M. Anikin, A.A. Lebedev, S.N. Pyatko, V.A. Soloviev, A.M. Strel'chuk, Minority carrier diffusion length in epitaxially grown SiC(6H) pn diodes, Springer Proc. In Phys. 56 (1992) 269-273.

DOI: 10.1007/978-3-642-84402-7_40

Google Scholar

[4] M. Ikeda, T. Hayakawa, S. Yamagiwa, H. Matsunami, T. Tanaka, Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: electroluminescence mechanisms, J. Appl. Phys. 50 (1979) 8215-8225.

DOI: 10.1063/1.325920

Google Scholar

[5] A.V. Naumov and V.I. Sankin, Lifetimes of nonequilibrium holes in SiC-based diodes, Sov. Phys. Semicond. 23 (1989) 630-633.

Google Scholar

[6] M.M. Anikin, A.S. Zubrilov, A.A. Lebedev, A.M. Strel'chuk, A.E. Cherenkov, Recombination processes in 6H-SiC pn structures and deep centers, Sov. Phys. Semicond. 25 (1991).

Google Scholar

[7] P.G. Neudeck, Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis, J. Of Electr. Materials 27 (1998) 317-323.

DOI: 10.1007/s11664-998-0408-5

Google Scholar

[8] P.B. Klein, Carrier lifetime measurement in n- 4H-SiC epilayers, J. Appl. Phys. 103 (2008) 033702 1-033702 14.

DOI: 10.1063/1.2837105

Google Scholar

[9] W.W. Gartner, Depletion-layer photoeffects in semiconductors, Phys. Rev. 116 (1959) 84-87.

Google Scholar

[10] C. Donolato, A reciprocity theorem for charge collection, Appl. Phys. Lett. 46(3) (1985) 270-272.

Google Scholar