Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

Naoya Iwamoto; Alexander Azarov; Takeshi Ohshima; Anne Marie Mardal Moe; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.858.357

Paper Titles

Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
p.341

Recombination Processes in 4H-SiC pn Structures
p.345

Study of Nanoscale Inhomogeneities in Silicon Carbide Crystals via Small-Angle X-Ray Scattering
p.349

Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
p.353

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy
p.357

Three-Dimensional Imaging of Extended Defects in 4H-SiC
p.361

Post-Growth Micropipe Formation in 4H-SiC
p.367

Observation of Pair Structures of Threading Dislocation and Surface Defect in 4H-SiC Wafer by Mirror Projection Electron Microscopy
p.371

Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
p.376

HomeMaterials Science ForumMaterials Science Forum Vol. 858Thermal Stability of Deep-Level Defects in...

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

Abstract:

Effects of high temperature treatments on the deep-level defects in high-purity semi-insulating substrates are studied by employing electrical and chemical analyses. Thermal admittance spectroscopy reveals the presence of a deep-level defect, labeled X_MID, with a state near the middle of the bandgap, playing a decisive role to realize the semi-insulating characteristics. The concentration of the X_MID level decreases with increasing treatment temperature from 1400 to 1700 °C, and consequently, the substrate becomes more conductive toward p-type due to residual boron impurities. The identity of X_MID is yet to be known but the carbon vacancy is briefly discussed as a possible candidate.

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Materials Science Forum (Volume 858)

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357-360

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https://doi.org/10.4028/www.scientific.net/MSF.858.357

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Online since:

May 2016

Authors:

Naoya Iwamoto*, Alexander Azarov, Takeshi Ohshima, Anne Marie Mardal Moe, Bengt Gunnar Svensson

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Deep-Level Defect, High Purity Semi-Insulating, Thermal Admittance Spectroscopy

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