Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes

Abstract:

In this contribution, we report on the electrical characterization of point defects in 4H-SiC p⁺in diodes. Ten electrically active levels have been detected in the base region of the devices, by employing Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Of these ten levels, six are majority carrier traps, in the 0.1-1.7 eV energy range below the conduction band edge, and four were minority carrier traps located in the 0.13-0.4 eV energy range above the valence band edge. We found that, during DLTS measurements, both majority and minority carrier traps can be detected and we explain this by considering the behavior of the quasi-Fermi levels. At last, we studied the impact of proton irradiation on the minority charge carrier lifetime.

• Periodical: Materials Science Forum (Volume 858)
• Pages: 308-311
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.858.308
• Online since: May 2016
• Authors: Giovanni Alfieri, Andrei Mihaila*, Hussein M. Ayedh, Bengt Gunnar Svensson, Pavel Hazdra, Philippe Godignon, José Millan, S. Kicin
• Keywords: Defects, DLTS, Lifetime, OCVD, PiN Diode, Proton Irradiation

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