ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC

Kohki Murakami; Soki Tanai; Takafumi Okuda; Jun Suda; Tsunenobu Kimoto; Takahide Umeda

doi:10.4028/www.scientific.net/MSF.858.318

Paper Titles

Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
p.297

Doping of 4H-SiC with Group IV Elements
p.301

Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes
p.308

Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices
p.312

ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC
p.318

First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC
p.322

Fluorescent P-Type 4H-SiC Grown by PVT Method
p.326

Formation and Annihilation of Carbon Vacancies in 4H-SiC
p.331

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift
p.337

HomeMaterials Science ForumMaterials Science Forum Vol. 858ESR Study on Hydrogen Passivation of Intrinsic...

ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC

Abstract:

We studied the hydrogen passivation/depassivation of four types of intrinsic defects (EI5/6, HEI7/8, HEI9/10, and P6/7) in p-type and semi-insulating 4H-SiC by means of electron spin resonance (ESR) for examining the origin of career-lifetime-killing defects. We suggest that the HEI7/8 and P6/7 centers are the strongest candidate for the origin of the lifetime-killing defects.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

318-321

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.318

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Online since:

May 2016

Authors:

Kohki Murakami*, Soki Tanai, Takafumi Okuda, Jun Suda, Tsunenobu Kimoto, Takahide Umeda

Keywords:

ESR, Hydrogen Passivation, Intrinsic Defects, p-Type 4H-SiC, Semi-Insulating 4H-SiC

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