Study on Influence of Silicon Crystal Dislocation on Removal in Atmospheric Pressure Plasma Polishing

Abstract:

Compared to perfect crystal lattice, typical edge dislocation structure has been modeled by quantum chemistry simulation in order to analyze the influence of crystal structure defects on removal process in atmospheric pressure plasma polishing (APPP). The Partial density of states (PDOS), number of states, average number of bonding electrons and energy have been calculated and analyzed further for these models. The analysis results reveal that silicon crystal with edge dislocation can be etched more easily than that of perfect crystal lattice. It is also found that the removal rate of sample with higher dislocation density is larger than that of lower dislocation density in the same experiment conditions. Thus, theoretical simulation demonstrates that structure dislocation is helpful for raising the etching rate, which accords well with testifying experiments results. But maybe structure dislocation could deteriorate surface roughness to some extent in initial stage of machining, as the dislocation structure is usually etched unevenly, although this is just a transition period.

• Periodical: Materials Science Forum (Volume 878)
• Pages: 83-88
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.878.83
• Online since: November 2016
• Authors: Guang Lu Jia, Bing Li, Ju Fan Zhang*
• Keywords: Atmospheric Pressure Plasma, Chemical Etching, Edge Dislocation, Silicon

References

[1] Wang C, Sun X, Li C, et al, Effects of defect on the storage and diffusion of Na and Mg interstitials in Si anode, J. Journal of Alloys & Compounds. 645 (2016) 157-162.

DOI: 10.1016/j.jallcom.2015.09.014

[2] Zhou X, Kang K, Xie S, et al, Atomic-Scale Spectroscopy of Gated Monolayer MoS, J. Nano Letters. 16(5) (2016) 3148-3154.

DOI: 10.1021/acs.nanolett.6b00473

[3] Zou Y, Chakravarty S, Wray P, et al, Mid-Infrared Holey and Slotted Photonic Crystal Waveguides in Silicon-on-Sapphire for Chemical Warfare Simulant Detection, J. Sensors & Actuators B Chemical. 221 (2015) 1094-1103.

DOI: 10.1016/j.snb.2015.07.061

[4] Zhang J F, Wang B, Dong S, A new development of ultra-smooth surface machining technology, J. Optical Technique. 33 (2007) 150-154.

[5] Zhang J F, Li B, Wang B, et al, Surface Quality Improvement of Atmospheric Pressure Plasma Polishing (APPP) in Machining of Silicon Ultra-Smooth Surfaces, J. Journal of Advanced Mechanical Design Systems & Manufacturing. 6(4) (2012) 464-471.

DOI: 10.1299/jamdsm.6.464

[6] Li K, Liao T W, Surface/subsurface damage and the fracture strength of ground ceramics, J. Journal of Materials Processing Technology. 57(3–4) (1996) 207-220.

DOI: 10.1016/0924-0136(95)02090-x

[7] Jang‐Yeon H, Min K H, Sang‐Kyu L, et al, High-Energy, High-Rate, Lithium-Sulfur Batteries: Synergetic Effect of Hollow TiO2 -Webbed Carbon Nanotubes and a Dual Functional Carbon-Paper Interlayer, J. Advanced Energy Materials. 6(1) (2015).

DOI: 10.1002/aenm.201501480

[8] Xiang Y, Ju P, Wang Y, et al, Chemical etching preparation of the Bi2WO6/BiOI p–n, heterojunction with enhanced photocatalytic antifouling activity under visible light irradiation, J. Chemical Engineering Journal. 288 (2016) 264-275.

DOI: 10.1016/j.cej.2015.11.103

[9] Zhang J F, Wang B, Dong S, Application of atmospheric pressure plasma polishing method in machining of silicon ultra-smooth surfaces, J. Frontiers of Electrical & Electronic Engineering in China. 3(4) (2008) 480-487.

DOI: 10.1007/s11460-008-0072-9