The Mechanical Properties of TiN Films Grown by a Pure N2 Plasma Sputtering

Bu Seong Jang; Chang Hyun Lee; Jae Woong Choi; Ji Seon Kwon; Ha Kyung Kim; Chang Hwan Park; Hwa Min Kim

doi:10.4028/www.scientific.net/MSF.878.89

Paper Titles

Large Scale Synthesis of Porous Carbon-Nitride Microsphere for Visible Light Harvesting
p.64

Coating Thickness Characterization of Composite Materials Using Terahertz Waves
p.70

Study on Process Parameters on Single Point Incremental Forming of PVC
p.74

Study on Influence of Silicon Crystal Dislocation on Removal in Atmospheric Pressure Plasma Polishing
p.83

The Mechanical Properties of TiN Films Grown by a Pure N₂ Plasma Sputtering
p.89

Isotope Effect of the Stereodynamics for the Reactions N(⁴S)+HD→NH+D and N(⁴S)+HD→ND+H
p.96

Preparation of Coal-Based Columnar Activated Carbon for Removal of Benzene
p.101

Characterisation of Silicon Carbide from Dark Red Meranti Wood
p.108

Effect of Groove Geometry on Rolling Contact Fatigue of PEEK Thrust Bearings in Water
p.117

HomeMaterials Science ForumMaterials Science Forum Vol. 878The Mechanical Properties of TiN Films Grown by a...

The Mechanical Properties of TiN Films Grown by a Pure N₂ Plasma Sputtering

Abstract:

Titanium nitride (TIN) films were prepared by using rf magnetron sputtering technique. The films were deposited by a pure N₂ plasma sputtering. Their mechanical properties, such as nanoindentation hardness, friction coefficient, and wettability have been investigated. XRD studies revealed that the orientation of TiN films changes toward the (111) orientation with decreasing working pressure due to a strong compressive stress during deposition . The strongest TiN(111) orientation is found when the film is deposited at working pressure of 1pa. This film shows a largest hardness of 15 GPa and a smallest friction coefficient of 0.17. This film was also found to be accompanied by a water-repellent surface with a water contact angle more than 100^°

You might also be interested in these eBooks

Advanced Materials Design and Mechanics IV

View Preview

Info:

Periodical:

Materials Science Forum (Volume 878)

Pages:

89-95

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.878.89

Citation:

Cite this paper

Online since:

November 2016

Authors:

Bu Seong Jang, Chang Hyun Lee, Jae Woong Choi, Ji Seon Kwon, Ha Kyung Kim, Chang Hwan Park, Hwa Min Kim*

Keywords:

Hardness, PVD, RF Magnetron Sputtering, Thin Films, TiN

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] U. Beck, G. Reiners, U. Kopacz, H. A Jehn, Surf. Coat. Technol 60 (1993) 389.

Google Scholar

[2] J.E. Sundgren, Thin Solid Films 128 (1985) 21.

Google Scholar

[3] R. F Bunshah, Thin Solid Films 93 (1982) 397.

Google Scholar

[4] M. Stoiber, J. Wagner, C. Mitterer, K. Gammer, H. Hutter, C. Lugmair, R. Kullmer, Surf. Coat. Technol. 174-175 (2003) 687.

DOI: 10.1016/s0257-8972(03)00353-0

Google Scholar

[5] F. Vaz, P. Machado, L. Rebouta, P. Cerqueira, Ph. Goudeau, J.P. Riviere, E. Alves, K. Pischow, J. de Rijk, Surf. Coat. Technol. 174-175 (2003) 375.

DOI: 10.1016/s0257-8972(03)00711-4

Google Scholar

[6] S.J. Bull, D. S Rickerby, A. Jain, Surf. Coat. Technol. 41 (1990) 269.

Google Scholar

[7] M. Stoiber, E. Badisch, C. Lugmair, C. Mitterer, Surf, Coat, Technol. 163-164 (2003) 451.

Google Scholar

[8] J. Pelleg, L.Z. Zevin, S. Lungo, N. Croitoru, Thin Solid Films 197 (1991) 117.

DOI: 10.1016/0040-6090(91)90225-m

Google Scholar

[9] S.Y. Chun, J. Korean Phys. Soc 52, 1227 (2008).

Google Scholar

[10] M. GoTo, A. Kasahara, M. Tosa, J, Hobely, M. Kishimoto, K. Yoshihara, H. Fukumura, J. Vac, Sci. Technol. A. 20 (4) (2002) 1458.

Google Scholar

[11] I. Petrov, L. Hultman, U. Helmersson, S.A. Barnett, J.E. Sundgren and J. E Greene, Thin Solid Films 169, 299 (1989).

DOI: 10.1016/0040-6090(89)90713-x

Google Scholar

[12] H. Ljungcrantz, L. Hultman, J. E, Sundgren and L. Karisson, J. Appl. Phys. 78, 832 (1995).

Google Scholar

[13] L. Hultman, U. Helmersson, S. A. Barnett, J. E. Sundgren and J. E. Greene, J. Appl. Phys. 61, 552 (1987).

Google Scholar