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Materials Research at University of Nevada, Las Vegas

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Abstract:

High-pressure studies on thermoelectric materials allow the study of the relationship between structural, elastic, and electronic properties. The High Pressure Science and Engineering Center (HiPSEC) at UNLV performs interdisciplinary research on a wide variety of materials at high pressures. One such system, CrSi2 is an indirect band gap semiconductor that has potential applications in solar cells.

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THERMEC 2016 View Preview

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Periodical:

Materials Science Forum (Volume 879)

Pages:

386-389

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.879.386

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Online since:

November 2016

Authors:

Ravhi S. Kumar, Weldu Gabrimicael, Andrew L. Cornelius*

Keywords:

High Pressure, Semiconductor, Solar Cells, Thermoelectrics, X-Ray Diffraction

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] M.A. Nicolet and S.S. Lau in VLSI Electronics: Microstructure Science, edited by N.G. Einspruch and G.B. Larrabee (Academic, NY 1983) Vol. 6, p.329.

Google Scholar

[2] Anderson etal., J. Appl. Phys. 45 (1974) 3913.

Google Scholar

[3] L.F. Matheiss Phys Rev B 15 (1991) 12549.

Google Scholar

[4] Bewlay et al., Mat. Manufac. Process. 9 (1994) 89.

Google Scholar

[5] I. Nishida, J. Mater. Sci. 7 (1972) 1119.

Google Scholar

[6] Tokushima et al., J. Mat. Sci. 4 (1969) 978.

Google Scholar

[7] H.K. Mao and P.M. Bell, J. Geophys. Res. 91 (1996) 4673.

Google Scholar

[8] Chad et al., Mat. Charact. 59 (2008) 74.

Google Scholar

[9] Matheiss et al., Phys. Rev. B 45 (1992) 3252.

Google Scholar

[10] F. Birch, J. Geophys. Res. 83 (1978) 1257.

Google Scholar

[11] Mori et al., Phys. Stat. Sol. (b) 235 (2003) 302.

Google Scholar

[12] Shanina et al., Phys. Sol. State 49 (2007) 39.

Google Scholar

[13] Nishitani et al., Phys. Rev. B 58 (1998) 9741.

Google Scholar

[14] T. Laetsch and R.T. Downs, Abstracts of 19th General meeting of MineralogicalAssociation, Kobe, Japan, 23-28 July (2006).

Google Scholar

[15] Ma et al., J. Alloys and Compd. 376 (2004) 176.

Google Scholar

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