Effect of Annealing upon Retention of He and H in Irradiated SiC

Mihail Ionescu; Alec Deslandes; Rohan Holmes; Mathew C. Guenette; Inna Karatchevtseva; Gregory R. Lumpkin

doi:10.4028/www.scientific.net/MSF.879.810

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HomeMaterials Science ForumMaterials Science Forum Vol. 879Effect of Annealing upon Retention of He and H in...

Effect of Annealing upon Retention of He and H in Irradiated SiC

Abstract:

Silicon carbide (3C-β SiC) samples were irradiated with He ions of energy up to 30 keV and a fluence up to 10¹⁶/cm², to produce damage in the near-surface region. A duplicate set of He ion irradiated SiC samples, as well as undamaged SiC, were also irradiated with H₂⁺ ions of energy up to 20 keV and a similar fluence, to study the interaction of H species with pristine SiC and with He radiation-damaged SiC. Samples were annealed in steps of 200 K, from 473 K to 1273 K, and the retention of H and He were measured using elastic recoil detection analysis with 7.8 MeV C³⁺ ions, after each anneal step. Modification to the surface following irradiation is observed via Raman spectroscopy, which exhibits development of damage states such as disordered carbon and Si-Si peaks. Only minor changes in the H and He profiles were observed up to 1073 K, however after the 1273 K anneal the H and He profiles changed considerably, with a marked difference between samples irradiated only with He and those irradiated with He and H.

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Periodical:

Materials Science Forum (Volume 879)

Pages:

810-814

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.879.810

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Online since:

November 2016

Authors:

Mihail Ionescu*, Alec Deslandes, Rohan Holmes, Mathew C. Guenette, Inna Karatchevtseva, Gregory R. Lumpkin

Keywords:

ERDA, Fusion Materials, SiC

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References

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