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Effect of Temperature on the Microstructure and Electrical Conductivity of Microcrystalline Si Films
Abstract:
Micro-Si films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on microstructure and electrical conductivity of micro-Si film were investigated. The results show that, with the increasing of substrate temperature, crystallinity and grain size increased monotonously, of which a competing balance would determine the electrical conductivity of micro-Si films. Based on these results, relatively small grain size and appropriate crystallinity would be beneficial to improve the electrical properties of micro-Si films.
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28-32
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March 2017
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© 2017 Trans Tech Publications Ltd. All Rights Reserved
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